Pattern formation method

Details Pattern formation method Pattern formation method

2006-01-31

2006-01-31

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S948000, C438S949000

Reexamination Certificate

active

06992015

ABSTRACT:
After forming a resist film made from a chemically amplified resist material, pattern exposure is carried out by selectively irradiating the resist film with exposing light while supplying, onto the resist film, water that includes triphenylsulfonium nonaflate, that is, an acid generator, and is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake and is then developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.

REFERENCES:
patent: 5518579 (1996-05-01), Katsuyama et al.
patent: 5580702 (1996-12-01), Hayase et al.
patent: 6699645 (2004-03-01), Takahashi et al.
patent: 2001-316863 (2001-11-01), None
M. Switkes et al., “Immersion lithography at 157 nm”, J. Vac. Sci. Technolo., B19(6), (2001), pp. 2353-2356.

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