Pattern formation method

Details Pattern formation method Pattern formation method

2005-01-11

2005-01-11

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S949000, C430S328000

Reexamination Certificate

active

06841488

ABSTRACT:
A resist film is formed from a chemically amplified resist material including a base polymer having a protecting group released by a function of an acid, an acrylic compound and an acid generator that generates an acid when irradiated with light. The resist film is selectively irradiated with exposing light for pattern exposure, and is developed after the pattern exposure so as to form a resist pattern having a hole or groove opening. The size of the opening is reduced by irradiating the resist pattern with light with annealing.

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