Pattern exposure method and system

Radiant energy – Means to align or position an object relative to a source or...

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2504922, H01J 3730

Patent

active

061245984

ABSTRACT:
The pattern exposure method formes a pattern by a combination of a reduction projection exposure system 10 and an electron beam exposure system 20. An optical strain in a region of a prescribed size exposed by the reduction projection exposure system 10 is measured by a coordinates detection system 30. A first pattern of a shot size is exposed by the reduction projection exposure system 10, and a second pattern to be superimposed on the first pattern is formed by the electron beam exposure system 20, correcting based on a correction value which is based on the optical strain in the region of the prescribed size measured by the coordinates detection system 30.

REFERENCES:
patent: 4591540 (1986-05-01), Bohlen et al.
patent: 5329130 (1994-07-01), Kai et al.
patent: 5508527 (1996-04-01), Kuroda et al.
patent: 5525808 (1996-06-01), Irie et al.
patent: 5608226 (1997-03-01), Yamada et al.
patent: 5795687 (1998-08-01), Yasuda

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