Pattern exposure method and pattern exposure apparatus

Details Pattern exposure method and pattern exposure apparatus Pattern exposure method and pattern exposure apparatus

2008-05-13

2008-05-13

Nguyen, Henry Hung (Department: 2851)

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C355S067000

Reexamination Certificate

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11075245

ABSTRACT:
A pattern exposure method and a pattern exposure apparatus in which the throughput is improved with an inexpensive apparatus and without a low running cost. Output faces of a plurality of laser beams emitted from a plurality of semiconductor lasers respectively are arranged in two directions. One of the directions is the same direction as the scanning direction of a polygon mirror while the other is a direction crossing the scanning direction of the polygon mirror. In this event, the array pitch of the output faces arranged in the direction crossing the scanning direction of the polygon mirror is made equal to resolution of an exposure pattern. In this event, the wavelength of each laser may be made not longer than 410 nm.

REFERENCES:
patent: 5055663 (1991-10-01), Morimoto et al.
patent: 6242754 (2001-06-01), Shiraishi
patent: 7034973 (2006-04-01), Sakai
patent: 2002/0063770 (2002-05-01), Takesue
patent: 2005/0063435 (2005-03-01), Imai et al.

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