Pattern exposing method using phase shift and mask used therefor

Details Pattern exposing method using phase shift and mask used therefor Pattern exposing method using phase shift and mask used therefor

1994-07-14

1995-12-05

Chapman, Mark A.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430312, 430325, 430326, 430394, G03F 900

Patent

active

054728134

ABSTRACT:
A pattern exposing method forms a predetermined resist pattern on a substrate by exposing a first resist layer which is formed on the substrate using a first reticle which includes a first pattern for exposing a first corresponding pattern on the first resist layer by use of a phase shift of light transmitted through the first reticle, developing the exposed first resist layer, exposing a second resist layer which is formed on the entire surface of the substrate, including a top of the first resist layer, using a second reticle which has a second pattern for exposing a second corresponding pattern on the second resist layer by use of light transmitted through the second reticle, where the second corresponding pattern overlaps at least a part of the first corresponding pattern, and developing the second resist layer so that a part of the first corresponding pattern is removed by the second corresponding pattern and the predetermined resist pattern is formed.

REFERENCES:
patent: 4869999 (1989-09-01), Fukuda et al.
patent: 5134058 (1992-07-01), Han
Japanese Journal of Applied Physics, vol. 30, No. 5, May 1991, Tokyo, Japan, pp. 1131-1136, XP263716 Toshihiko Tanaka et al. A Novel Optical Lithography Technique Using the Phase-Shifter Fringe.
"0.2 .mu.m or Less i-Line Lithography by Phase-Shifting-Mask Technology", Jinbo et al, International Electron Devices Meeting, 1990, pp. 825-828.

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