Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1992-09-03
1994-11-15
McCamish, Marion E.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430312, 430325, 430326, 430394, G03F 900
Patent
active
053647165
ABSTRACT:
A pattern exposing method forms a predetermined resist pattern on a substrate by exposing a first resist layer which is formed on the substrate using a first reticle which includes a first pattern for exposing a first corresponding pattern on the first resist layer by use of a phase shift of light transmitted through the first reticle, developing the exposed first resist layer, exposing a second resist layer which is formed on the entire surface of the substrate, including a top of the first resist layer, using a second reticle which has a second pattern for exposing a second corresponding pattern on the second resist layer by use of light transmitted through the second reticle, where the second corresponding pattern overlaps at least a part of the first corresponding pattern, and developing the second resist layer so that a part of the first corresponding pattern is removed by the second corresponding pattern and the predetermined resist pattern is formed.
REFERENCES:
patent: 4869999 (1989-09-01), Fukuda et al.
patent: 5134058 (1992-07-01), Han
Japanese Journal of Applied Physics, vol. 30, No. 5, May 1991, Tokyo, Japan, pp. 1131-1136, XP263716 Toshihiko Tanaka et al. A Novel Optical Lithography Technique using the Phase-Shifter Fringe.
Patent Abstracts of Japan, vol. 13, No. 586 (P-982) [3934], Dec. 25, 1989, & JP-A-1-248150, Oct. 3, 1989.
Patent Abstracts of Japan, vol. 9, No. 126 (E-318) [1849], May 31, 1985, & JP-A-60-15928, Jan. 26, 1985.
Patent Abstracts of Japan, vol. 6, No. 52 (E-100) [930], Apr. 7, 1982, & JP-A-56-165325, Dec. 18, 1981.
"0.2 .mu.m or Less i-Line Lithography by Phase-Shifting-Mask Technology", Jinbo et al., International Electron Devices Meeting, 1990, pp. 825-828.
Haruki Tamae
Kanazawa Masao
Nakagawa Kenji
Tabata Yasuko
Chapman Mark A.
Fujitsu Limited
McCamish Marion E.
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