Pattern delineating apparatus for use in the EUV spectrum

Details Pattern delineating apparatus for use in the EUV spectrum Pattern delineating apparatus for use in the EUV spectrum

1994-10-20

1996-05-28

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430322, 430324, 378 34, 378 35, G03F 900

Patent

active

055210317

ABSTRACT:
The operating principle of the attenuated phase mask is incorporated in a reflecting structure for use with extreme ultraviolet radiation. A working projection-reduction system for use with 0.18 .mu.m and smaller features combines the mask with all-reflecting optics.

REFERENCES:
patent: 4890309 (1989-12-01), Smith et al.
patent: 5315629 (1994-05-01), Jewell et al.
patent: 5339346 (1994-08-01), White
Y.-C. Ku, et al., "Use of a pi-phase shifting x-ray mask to increase the intensity slope at feature edges", J. Vac. Sci. Technol. B 6 (1) Jan./Feb. 1988.
J. E. Bjorkholm, et al., "Reduction imaging at 14 nm using multilayer-coated optics: Printing of features smaller than 0.1 .mu.m", J. Vac. Sci. Technol. B 8 (6) Nov./Dec. 1990.
D. W. Berreman, et al., "Use of trilevel resists for high-resolution soft-x-ray projection lithography", Appl. Phys. Lett. 56(22), p. 2180 May 1990.
A. E. Novembre, et al., "A sub-0.5 .mu.m Bilevel Lithographic Process Using the Deep-UV Electron-Beam Resist P(SI-CMS)", Polymer Engineering and Science vol. 29, No. 14, Jul. 1989.
D. M. Tennant, et al., "Defect repair for soft x-ray projection lithography masks", J. Vac. Sci. Technol. B 10 (6) Nov./Dec. 1992.
G. N. Taylor, et al., "Silylated positive tone resists for EUV lithography at 14 nm", Microelectronic Engineering, vol. 23, p. 279 (Jun. 1994).
G. N. Taylor, et al., "Self-assembly: its use in at-the-surface imaging schemes for microstructure fabrication in resist films", Microelectronic Engineering vol. 23, p. 259 (Jun. 1994).

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