Pattern defect inspection method, photomask manufacturing...

Optics: measuring and testing – Inspection of flaws or impurities – Surface condition

Reexamination Certificate

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C356S237200

Reexamination Certificate

active

07599053

ABSTRACT:
A defect inspection method is adapted to inspect a defect generated in a main pattern of a photomask. The main pattern includes a repetitive pattern in which unit patterns are periodically arranged. The method forms, an auxiliary pattern for inspection simultaneously with forming the main pattern. The auxiliary pattern includes a repetitive pattern having a period different from that of the main pattern. The method irradiates a light onto the auxiliary pattern at a predetermined incident angle and receives diffracted light generated by the auxiliary pattern by an observation apparatus to detect a defect of the auxiliary pattern, thereby determining the presence of a defect of the main pattern.

REFERENCES:
patent: 5764209 (1998-06-01), Hawthorne et al.
patent: 2005/0153466 (2005-07-01), Choi et al.
patent: 2006/0105476 (2006-05-01), Choi et al.
patent: 9-329555 (1997-12-01), None

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