Pattern correcting method of mask for manufacturing a...

Details Pattern correcting method of mask for manufacturing a... Pattern correcting method of mask for manufacturing a...

2007-12-03

2010-11-02

Le, Brian Q (Department: 2624)

Image analysis

Applications

Manufacturing or product inspection

C382S145000, C382S147000

Reexamination Certificate

active

07826655

ABSTRACT:
A method of correcting a mask pattern for manufacturing a semiconductor device is disclosed. The method includes extracting a corner portion of a transistor portion. A distance from the corner portion to a line portion is extracted. A distance where the line portion does not overlap a rounding of the corner portion generated after a wafer process is obtained. A correction rule is made for a correction whether the corner portion is notched or not from the obtained distance. A corresponding relationship between the distance and an intersection part is obtained and a correction is made based on the correction rule to the corner portion.

REFERENCES:
patent: 5879844 (1999-03-01), Yamamoto et al.
patent: 9-292701 (1997-11-01), None
patent: 9-319067 (1997-12-01), None

Affiliated with

Also associated with

Rating

Pattern correcting method of mask for manufacturing a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pattern correcting method of mask for manufacturing a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pattern correcting method of mask for manufacturing a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4196398