Passively mode locked laser having a saturable absorber

Coherent light generators – Particular active media – Semiconductor

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372 18, 372 20, 357 17, 357 19, H01S 319

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active

044358091

ABSTRACT:
A region of saturable absorption is produced in semiconductor lasers by proton bombardment and results in subpicosecond optical pulses.

REFERENCES:
patent: 3654497 (1972-04-01), Dyment et al.
patent: 4325034 (1982-04-01), Dyment et al.
Ziel et al., "Subpicosecond Pulses from Passively Mode-Locked GaAs Buried Optical Guide Semiconductor Lasers", App. Phys. Lett. 39(7), Oct. 1, 1981, pp. 525-527.
H. Matsumura, et al., Journal of Applied Physics, "Electrical Measurement of the Lateral Spread of the Proton Isolation Layer in GaAs", vol. 48, No. 7, Jul. 1977, pp. 2779-2783.
J. P. van der Ziel, et al., J. Appl. Phys., "Mode Locking of Strip Buried Heterostructure (AlGa)As Lasers Using an External Cavity, " vol. 51 (6), Jun. 1980, pp. 3033-3037.
E. P. Ippen, et al., Appl. Phys. Lett., "Picosecond Pulse Generation by Passive Mode Locking of Diode Lasers," vol. 37 (3), Aug. 1, 1980, pp. 267-269.
Eleventh International Quantum Electronics Conf., paper W.3.

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