Passive temperature compensation of silicon MEMS devices

Details Passive temperature compensation of silicon MEMS devices Passive temperature compensation of silicon MEMS devices

2011-02-15

2011-02-15

Pert, Evan (Department: 2826)

Wave transmission lines and networks

Resonators

Temperature compensated

C333S186000, C257S415000, C438S050000, C438S053000

Reexamination Certificate

active

07889030

ABSTRACT:
The invention relates to MEMS devices. In one embodiment, a micro-electromechanical system (MEMS) device comprises a resonator element comprising a semiconducting material, and at least one trench formed in the resonator element and filled with a material comprising oxide. Further embodiments comprise additional devices, systems and methods.

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