Electricity: measuring and testing – Testing potential in specific environment – Voltage probe
Patent
1995-02-14
1997-01-14
Wieder, Kenneth A.
Electricity: measuring and testing
Testing potential in specific environment
Voltage probe
257379, H01L 2702
Patent
active
055943284
ABSTRACT:
The current density versus voltage characteristics of integrated circuit processing equipment such as a plasma etcher are determined using a passive probe including a semiconductor wafer in which one or more clusters of individual passive charge monitors are fabricated. Each monitor includes an EEPROM device having a control electrode and a floating electrode over a channel region connecting source and drain regions, a charge collecting electrode connected to the control electrode, and a current sensing resistor connecting the charge collection electrode to the substrate for developing a threshold varying voltage. By determining changes in device threshold voltage, a corresponding surface-substrate potential is determined which can be divided by the value of the current-sensing resistor to yield a current. The current can then be divided by the area of the charge collecting electrode to yield a value of the current density. A single charge flux monitor thus yields one point on the J-V characteristic curve of the monitored charging source.
REFERENCES:
patent: 5315145 (1994-05-01), Lukaszek
Lukaszek et al., Characterization of Wafer Charging Mechanisms and Oxide Survival Prediction Methodology, Presentation at 1993 International Integrated Reliability Workshop, Lake Tahoe, California, Oct. 24-27, 1993, pp. 131-136.
Lukaszek et al., Characterization of Wafer Charging Mechanisms and Oxide Survival Prediction Methodology, Presentation at 1994 International Reliability Physics Symposium, San Jose, California, Apr. 12-14, 1994, pp. 334-338.
Bowser Barry C.
Wieder Kenneth A.
Woodward Henry K.
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