Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2007-09-04
2007-09-04
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C438S048000, C438S057000, C438S073000, C257S421000, C257S295000, C365S097000, C365S173000
Reexamination Certificate
active
11217146
ABSTRACT:
An integrated circuit device (300) comprises a substrate (301) and MRAM architecture (314) formed on the substrate (308). The MRAM architecture (314) includes a MRAM circuit (318) formed on the substrate (301); and a MRAM cell (316) coupled to and formed above the MRAM circuit (318). Additionally a passive device (320) is formed in conjunction with the MRAM cell (316). The passive device (320) can be one or more resistors and one or more capacitor. The concurrent fabrication of the MRAM architecture (314) and the passive device (320) facilitates an efficient and cost effective use of the physical space available over active circuit blocks of the substrate (404, 504), resulting in three-dimensional integration.
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Baird Robert W.
Chung Young Sir
Durlam Mark A.
Grynkewich Gregory W.
Salter Eric J.
Freescale Semiconductor Inc.
Huynh Andy
Ingrassia Fisher & Lorenz
Nguyen Thinh T
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