Passive element circuit

Details Passive element circuit Passive element circuit

1998-06-04

2000-06-06

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257531, 257532, H01L 2980, H01L 31112

Patent

active

060722053

ABSTRACT:
A passive element circuit is formed by a spiral inductor, a high-dielectric-constant thin-film capacitor, a via hole, and a bonding pad. By using SrTiO.sub.3 as the high-dielectric-constant thin-film, which exhibits a dielectric constant of 200 up to a frequency of 20 GHz, it is possible to achieve a reduction of the capacitor surface area to approximately 1/30 of the area formerly required when using a SiN.sub.x (dielectric constant up to 6.5). Two high-dielectric-constant thin-film capacitors, a via hole for grounding, and a bonding pad are disposed at the center, which are surrounded by the spiral inductor. To connect the two high-dielectric-constant thin-film capacitors are joined in series, they are formed on one high-dielectric-constant thin-film. A lead from the spiral inductor is made by a metal wire from the bonding pad at the center.

REFERENCES:
Silicon Processing for the VLSI Era, vol. 2, Lattice Press, S. Wolf, pp. 635-638, 1990.

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