Active solid-state devices (e.g. – transistors – solid-state diode – With metal contact alloyed to elemental semiconductor type... – In pn junction tunnel diode
Reexamination Certificate
2006-12-28
2011-12-13
Nguyen, Ha Tran T (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
With metal contact alloyed to elemental semiconductor type...
In pn junction tunnel diode
C257S104000, C257S461000, C257S653000, C257S537000, C438S965000
Reexamination Certificate
active
08076672
ABSTRACT:
A semiconductor device which includes a passivation structure formed with a conductive strip of resistive material that crosses itself once around the active region of the device to form a first closed loop, a continuous strip that loops around the first closed loop without crossing itself which crosses itself a second time to form a second closed loop.
REFERENCES:
patent: 3890698 (1975-06-01), Clark
patent: 4157563 (1979-06-01), Bosselaar
patent: 4947232 (1990-08-01), Ashida et al.
patent: 5382825 (1995-01-01), Neilson
patent: 5382826 (1995-01-01), Mojaradi et al.
patent: 5714396 (1998-02-01), Robb et al.
patent: 6525390 (2003-02-01), Tada et al.
patent: 7183626 (2007-02-01), Ranjan
patent: 2002/0098615 (2002-07-01), Honda et al.
patent: 2002/0179974 (2002-12-01), Noda et al.
patent: 2005/0189603 (2005-09-01), Inao et al.
patent: 2005/0230777 (2005-10-01), Chiola et al.
patent: 693 31 793 (2004-11-01), None
patent: 48-17683 (1973-01-01), None
patent: 03-089554 (1991-04-01), None
patent: 8-505984 (1996-06-01), None
patent: 10-163506 (1998-06-01), None
patent: 2000-294803 (2000-10-01), None
patent: 2001-352064 (2001-12-01), None
patent: 2002-118230 (2002-04-01), None
patent: 2002-535839 (2002-10-01), None
International Search Report Mailed Aug. 30, 2006 for PCT Application No. PCT/US05/41734.
German Office Action issued Mar. 3, 2008 in corresponding German Application No. 11 2005 002 852.6-33.
Farjami & Farjami LLP
International Rectifier Corporation
Nguyen Ha Tran T
Tran Thanh Y
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