Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-03-01
2005-03-01
Harvey, Minsun Oh (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S041000, C372S049010, C372S050121, C372S054000
Reexamination Certificate
active
06862309
ABSTRACT:
A method for forming an oxide VCSEL (vertical cavity surface-emitting laser) includes forming a VCSEL structure, forming an oxidation cavity partially through the VCSEL structure, oxidizing a layer in the VCSEL structure, forming a first passivation layer over a surface of the oxidation cavity, and forming a second passivation layer over the first passivation layer. An oxide VCSEL structure includes a bottom mirror region, an active region atop the bottom mirror region, a top mirror region atop the active region, an oxidation cavity partially through the top mirror region, a first passivation layer covering a surface of the oxidation cavity, and a second passivation layer covering the first passivation layer. In both the method and the structure, the first passivation layer can be made of silicon nitride (SiN) while the second passivation layer can be made of silicon oxynitride (SiON).
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Cheng An-Nien
DeBrabander Gregory N.
Widjaja Wilson Hasan
Xie Suning
Agilent Technologie,s Inc.
Harvey Minsun Oh
Rodriguez Armando
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