Passivation photoresist stripping method to eliminate photoresis

Details Passivation photoresist stripping method to eliminate photoresis Passivation photoresist stripping method to eliminate photoresis

1998-09-14

2000-08-22

Fourson, George

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438120, 438618, 438700, 438750, 438781, 438906, 438948, 438963, H01L 21308

Patent

active

061072028

ABSTRACT:
A method for stripping positive photoresist from a keyhole 17 in a passivation layer 18 before a heating process using NMP solvent strips after a photoresist strip. The process is summarized by the 5 steps as follows: (1) Photoresist strip 1 (e.g., EKC 830), (2) Photoresist strip 2 (e.g., EKC 830 photoresist stripper), (3) N-methly-2-pyrolidone (NMP) solvent strip-agitated (solvent is preferably the same solvent in the photoresist stripper (1 &2) (4) NMP solvent strip-agitated and (5) H.sub.2 O rinse. The NMP solvent strip steps (3) and (4) remove photoresist residue (16, FIG. 1) in the key hole 17. This prevents the formation of photoresist extrusions 24 while annealing the metal lines 14.

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