Passivation oxide conversion wherein an anodically grown oxide i

Fishing – trapping – and vermin destroying

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437225, 437228, 437237, 437243, 437244, 205157, H01L 2100, H01L 2102, H01L 2176, H01L 21473

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051889889

ABSTRACT:
A method of passivation of Hg.sub.1-x Cd.sub.x Te and similar semiconductors by surface oxidation (such as anodic) followed by chemical conversion of the oxide to either sulfide or selenide or a combination of both is disclosed. Preferred embodiments provide sulfide conversion by immersion of the oxide coated Hg.sub.1-x Cd.sub.x Te in a sodium sulfide solution in water with optional ethylene glycol and the selenidization by immersion in a solution of sodium selenide plus sodium hydroxide in water and ethylene glycol. Also, infrared detectors incorporating such sulfide and selenide passivated Hg.sub.1-x Cd.sub.x Te are disclosed.

REFERENCES:
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patent: 4818327 (1989-04-01), Davis et al.
patent: 4961829 (1990-10-01), Mainzer et al.
Nemirovsky, Y.; Interface of p-type Hg.sub.1-x Cd.sub.x Te passivated with native sulfides, J. Appl. Phys. 58(1), Jul. 1985, pp. 366-373.
Ghandhi, S., VLSI Fabrication Principles, Wiley & Sons, 1983, pp. 372-373.

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