Passivation of silicon oxide during photoresist burnoff

Details Passivation of silicon oxide during photoresist burnoff Passivation of silicon oxide during photoresist burnoff

1983-08-26

1985-10-01

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 156643, 156646, H01L 21306, C23F 102

Patent

active

045444161

ABSTRACT:
A method of removal of photoresist in a manufacturing process for semiconductor devices utilizes burnoff in an oxidizing atmosphere. In order to reduce contamination of underlying silicon dioxide layers, chlorine in the atmosphere getters Na+ ions, etc. The chlorine gas is obtained from HCL added to the oxidizing atmosphere.

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patent: 3920483 (1975-11-01), Johnson, Jr. et al.
patent: 4018627 (1977-04-01), Polata
patent: 4201800 (1980-05-01), Alcorn et al.
patent: 4374699 (1983-02-01), Sanders et al.
Rai et al., J. Phys. D, Appl. Phys., vol. 11, (1978), 2139.
Kriegler in Semiconductor Silicon 1973 ed., Huff et al., Princeton, N.J., 1974.
Crimi et al., IBM-TDB, 22, (1980), 4891.
Coburn, IBM-TDB, 20, (1978), 4922.

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