Passivation of semiconductor surfaces

Details Passivation of semiconductor surfaces Passivation of semiconductor surfaces

1988-09-30

1990-10-09

Niebling, John F.

Chemistry: electrical and wave energy

Processes and products

204 561, 357 52, 357 61, C25D 906, B32B 900

Patent

active

049618296

ABSTRACT:
A process for the passivation of the surface of certain semiconductor materials whereby there is formed a surface film. A mercury-cadmium-telluride (HgCdTe) semiconductor may be subjected to surface anodization in a bath comprising a fluoride resulting in a fluorine-containing surface film. The composition of the protective film can be varied according to the bath used in the electrochemical process for the production of the surface layer.
The invention further relates to semiconductors of the mercury cadmium telluride type passivated by the application of such surface films.

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