Passivation of multi-layer mirror for extreme ultraviolet...

Photocopying – Projection printing and copying cameras – Illumination systems or details

Reexamination Certificate

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C204S192270, C427S162000, C428S640000, C359S359000, C359S360000, C378S034000

Reexamination Certificate

active

07859648

ABSTRACT:
A reflector structure suitable for extreme ultraviolet lithography (EUVL) is provided. The structure comprises a substrate having a multi-layer reflector. A capping layer is formed over the multi-layer reflector to prevent oxidation. In an embodiment, the capping layer is formed of an inert oxide, such as Al2O3, HfO2, ZrO2, Ta2O5, Y2O3-stabilized ZrO2, or the like. The capping layer may be formed by reactive sputtering in an oxygen environment, by non-reactive sputtering wherein the materials are sputtered directly from the respective oxide targets, by non-reactive sputtering of the metallic layer followed by full or partial oxidation (e.g., by natural oxidation, by oxidation in oxygen-containing plasmas, by oxidation in ozone (O3), or the like), by atomic level deposition (e.g., ALCVD), or the like.

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