Passivation of mercury cadmium telluride semiconductor surfaces

Details Passivation of mercury cadmium telluride semiconductor surfaces Passivation of mercury cadmium telluride semiconductor surfaces

1981-08-20

1983-11-08

Silverberg, Sam

Metal treatment

Compositions

Heat treating

427 82, C23C 1100

Patent

active

044140401

ABSTRACT:
A process is provided for forming the native oxide on a semiconductor surface comprising Hg.sub.1-x Cd.sub.x Te, where x ranges from 0 to 1. The process comprises exposing the semiconductor surfce to a mixture of ozone and oxygen containing an effective amount of ozone sufficient to form a native oxide thereon. The desired amount of ozone is conveniently obtained by passing oxygen from a source through an ozone generator provided with a source of high voltage.

REFERENCES:
patent: 4176206 (1979-11-01), Inoue
"Sputter Cleaning and Dry Oxiation", Solzbacher Surface Science 97 (1980), pp. 191-205.

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