Metal treatment – Compositions – Heat treating
Patent
1981-08-20
1983-11-08
Silverberg, Sam
Metal treatment
Compositions
Heat treating
427 82, C23C 1100
Patent
active
044140401
ABSTRACT:
A process is provided for forming the native oxide on a semiconductor surface comprising Hg.sub.1-x Cd.sub.x Te, where x ranges from 0 to 1. The process comprises exposing the semiconductor surfce to a mixture of ozone and oxygen containing an effective amount of ozone sufficient to form a native oxide thereon. The desired amount of ozone is conveniently obtained by passing oxygen from a source through an ozone generator provided with a source of high voltage.
REFERENCES:
patent: 4176206 (1979-11-01), Inoue
"Sputter Cleaning and Dry Oxiation", Solzbacher Surface Science 97 (1980), pp. 191-205.
Collins D. W.
Karambelas A. W.
Rosenberg G. B.
Santa Barbara Reserarch Center
Silverberg Sam
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