Passivation of gallium arsenide devices with sodium sulfide

Details Passivation of gallium arsenide devices with sodium sulfide Passivation of gallium arsenide devices with sodium sulfide

1987-03-04

1988-06-14

Morgenstern, Norman

Fishing, trapping, and vermin destroying

4273722, 4274301, 4274432, 428688, 428698, 428699, 357 30, 437235, H01L 21302, B05D 512, B32B 900

Patent

active

047512016

ABSTRACT:
A method of passivating a gallium arsenide electronic device by depositing a sulfide film on a portion on the substrate to be passivated for providing an ideal interface layer wherein surface state density is substantially reduced. The resulting electrical performance of the device is significantly greater than similar devices which have not been subject to passivation. The device may be a heterojunction bipolar transistor, PIN diode or field effect transistor.

REFERENCES:
patent: 4095011 (1978-06-01), Hawrylo et al.
patent: 4354198 (1982-10-01), Hodgson et al.
patent: 4447469 (1984-05-01), Peters
patent: 4513057 (1985-04-01), Peters

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