Passivation of defects in laser annealed semiconductors

Details Passivation of defects in laser annealed semiconductors Passivation of defects in laser annealed semiconductors

1979-11-29

1981-05-12

Dean, R.

Metal treatment

Compositions

Heat treating

148187, 357 91, 427 35, 427 531, H01L 21265

Patent

active

042669863

ABSTRACT:
The application describes a technique for passivating point defects that are characteristic of laser annealed semiconductors. According to the technique, the laser annealed material is treated with atomic hydrogen to electrically deactivate the defects.

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