Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1995-02-27
1996-11-26
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257295, 257639, 257640, 257645, 257646, 257651, H01L 2976, H01L 3100
Patent
active
055788670
ABSTRACT:
A method for passivating an integrated circuit includes the RF sputtering of a hard passivation layer on the surface of the integrated circuit. The hard passivation layer can be a ceramic material such as various doped and undoped titanates, zirconates, niobates, tantalates, stanates, hafnates, and manganates, in either their ferroelectric or non-ferroelectric phases. Other exotic, hard, and usually non-ferroelectric materials not normally found in integrated circuit processing such as carbides may also be used. If the integrated circuit sought to be passivated contains ferroelectric devices, the hard passivation layer can be fabricated out of the same material used in the integrated ferroelectric devices. An optional silicon dioxide insulating layer can be deposited on the surface of the integrated circuit before the hard passivation layer is deposited. The optional silicon dioxide layer is used to prevent any possible contamination of the integrated circuit by the passivation layer. Similarly, an optional sealing layer such as silicon dioxide, silicon nitride, or polymer based materials can be deposited on top of the passivation layer to prevent any possible contamination of the integrated circuit package by the passivation layer. Once the hard passivation layer and any optional layers are formed, these layers are etched to provide access to underlying integrated circuit bonding pads.
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Argos, Jr. George
Spano John D.
Traynor Steven D.
Clark Jhihan
Meza, Esq. Peter J.
Ramtron International Corporation
Saadat Mahshid
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