Passivation for surfaces and interfaces of semiconductor laser f

Details Passivation for surfaces and interfaces of semiconductor laser f Passivation for surfaces and interfaces of semiconductor laser f

1983-02-14

1987-04-07

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 357 52, H01S 319

Patent

active

046566384

ABSTRACT:
A passivating layer is deposited on the facet of a light emitting device comprising a thin layer of a reactive material. The thickness of the passivating layer is sufficiently thick to react with an optimum amount of contaminants on the facet but is sufficiently thin so as to be consumed in the gettering process and render the layer electrically nonconductive, if initially conductive in nature. The reactive material may be selected from the group consisting of Al,Si,Ta,V,Sb,Mn,Cr and Ti. Al has been found to be particularly good as a passivating layer with a preferred thickness for the layer being in the range of about 20.ANG. to 75.ANG., depending upon whether the layer is for purposes of surface passivation or interface passivation.

REFERENCES:
patent: 4178564 (1979-12-01), Ladany et al.
patent: 4317086 (1982-02-01), Scifres et al.
patent: 4337443 (1980-06-01), Umeda et al.
T. Yuasia et al., "Degradation of (AlGa)As DH Lasers Due to Facet Oxidation," Applied Physics Letters, 32(2), pp. 119-121 (Jan. 15, 1978).
C. H. Henry et al., "Catastrophic Damage of AlGaAs Double-Heterostructure Laser Material", Journal of Applied Physics, 50, p. 3721 (1979).
F. R. Nash et al., "Facet Oxide Formation and Degradation of GaAs Lasers", Journal of Applied Physics, 50(5) pp. 3133-3441 (May, 1979).
F. R. Nash et al., "GaAs Laser Reliability and Protective Facet Coatings", Journal of Applied Physics, 50(5) pp. 3122-3132 (May 1979).
John A. F. Peek, "Water Vapor, Facet Erosion, and the Degradation of (Al,Ga)As DH Lasers Operated at CW Output Powers of Up to e m W/.mu. Stripewidth" IEEE Journal of Quantum Electronics, vol. QE-17, No. 5, pp. 781-786 (May 1981).
Mizuishi et al., "The Effect of Sputtered-SiO.sub.2 Facet Coating Films on the Suppression of Self Sustained Pulsations in the Output of (GaAl)As Double Heterostructure Lasers During CW Operation", IEEE Journal of Quantum Electronics, QE-16(7), pp. 728-734 (Jul. 1980).
S. K. Ghandhi et al., "Ion Beam Damage Effects During the Low Energy Cleaning of GaAs", IEEE Electron Device Letters, vol. EDL-3(2), pp. 48-50 (Feb. 1982).
M. Kawabe et al., "Effects of Ion Etching on the Properties of GaAs", Applied Optics, vol. 7(16), pp. 2556-2561 (Aug. 15, 1978).
R. S. Bauer et al., "Au and Al Interface Reactions with SiO.sub.2 ", Applied Physics Letters, vol. 37(11), pp. 1006-1008 (Dec. 1, 1980).
S. T. Kowalczyk et al., "Interfacial Chemical Reactivity of Metal Contacts with Thin Native Oxides of GaAs", Journal of Vaccum Science Technology, vol. 19(3), pp. 611-616 (Sep./Oct. 1981).
G. P. Schwartz et al., "Chemical Reaction at the Al-GaAs Interface", Journal of Vaccum Science Technology, vol. 19(3) pp. 607-610 (Sep./Oct. 1981).
"Dielectric Films on Gallium Arsenide" by W. F. Croydon and E. C. H. Parker and published in 1981 by Gordon & Beach, Science Publishers, Inc., Section 5.4.4 Oxidation of Deposited Metal Films (p. 101).

Affiliated with

Also associated with

Rating

Passivation for surfaces and interfaces of semiconductor laser f does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Passivation for surfaces and interfaces of semiconductor laser f, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Passivation for surfaces and interfaces of semiconductor laser f will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1090692