Passivation for surfaces and interfaces of semiconductor laser f

Details Passivation for surfaces and interfaces of semiconductor laser f Passivation for surfaces and interfaces of semiconductor laser f

1984-09-04

1986-01-07

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

427 87, 427 88, 29569L, 372 49, 148DIG60, H01S 319

Patent

active

045633681

ABSTRACT:
A method of making a facet coating for a semiconductor light emitting device, such as a semiconductor laser or the like, comprising the steps of depositing a thin layer of a reactive material on the cleaved facet to getter oxygen and other reactive contaminants therefrom, and controlling the thickness of the deposition to be sufficiently thick to react with an optimum amount of said contaminants but sufficiently thin in order that the reactive material is sufficiently consumed in the gettering process to render the thin layer electrically nonconductive if conductive in nature. The reactive material may be selected from the group consisting of Al, Si, Ta, V, Sb, Mn, Cr and Ti. Al has been found to be particularly good as a passivating layer with a preferred thickness for the layer being in the range of about 20 .ANG. to 75 .ANG., depending upon whether the layer is for purposes of surface passivation or interface passivation.

REFERENCES:
patent: 4178564 (1979-12-01), Ladany et al.
patent: 4337443 (1980-06-01), Umeda et al.
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Mizuishi et al., "The Effect of Sputtered-SiO.sub.2 Facet Coating Films on the Suppression of Self Sustained Pulsations in the Output of (GaAl)As Double Heterostructure Lasers During CW Operation", IEEE Journal of Quantum Electronics, QE-16(7), pp. 728-734 (Jul., 1980).
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"Dielectric Films on Gallium Arsenide" by W. F. Croydon and E. H. C. Parker and Published in 1981 by Gordon & Beach, Science Publishers, Inc., Section 5.4.4 Oxidation of Deposited Metal Films (page 101).
T. Yuasa et al., "Degradation of (AlGa)As DH Lasers Due to Facet Oxidation," Applied Physics Letters, 32(2), pp. 119-121 (Jan. 15, 1978).
C. H. Henry et al., "Catastrophic Damage of AlGaAs Double-Heterostructure Laser Material", Journal of Applied Physics, 50, p. 3721 (1979).
F. R. Nash et al., "Facet Oxide Formation and Degradation of GaAs Lasers", Journal of Applied Physics, 50(5), pp. 3133-3441 (May, 1979).

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