Fishing – trapping – and vermin destroying
Patent
1989-05-15
1991-04-23
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 52, 437195, H01L 21425, H01L 21441
Patent
active
050100246
ABSTRACT:
A method is described for producing an integrated circuit structure, including EPROMS, having excellent resistance to penetration by moisture and ion contaminants and a substantial absence of voids in an underlying metal layer in the structure, and, in the case of EPROMS, maintaining sufficient UV light transmissity to permit erasure which comprises stress relieving the underlying metal layer from stresses induced by the compressive stress of a silicon nitride encapsulating layer to inhibit the formation of voids therein by implanting the metal layer with ions to change the grain structure adjacent the surface of the metal layer; forming an insulating intermediate layer between said the layer and the silicon nitride layer selected from the class consisting of an oxide of silicon and silicon oxynitride having a compressive/tensile stress which sufficiently compensates for the compressive stress of the silicon nitride layer; and controlling the compressive stress in the silicon nitride layer to provide resistance to moisture and ion penetration superior to silicon dioxide or silicon oxynitride layers of similar thickness while inhibiting formation of voids in the metal layer.
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Allen Bert L.
Bowers Thomas R.
Gwozdz Peter S.
Advanced Micro Devices , Inc.
Chaudhuri Olik
Ojan Ourmazd S.
Taylor John P.
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