Passivation film of semiconductor device

Details Passivation film of semiconductor device Passivation film of semiconductor device

2007-02-05

2008-08-12

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S751000

Reexamination Certificate

active

07411299

ABSTRACT:
Disclosed are a method of manufacturing a semiconductor device and a structure of a semiconductor device. A method of forming a passivation film of a semiconductor device comprises the steps of forming metal wires on a semiconductor substrate, forming a buffer oxide film being a first passivation film on the metal wires, wherein the buffer oxide film can mitigate damage by plasma, forming a high density plasma film being a second passivation film on the buffer oxide film, and forming a third passivation film on the second passivation film. According to the present invention, it is possible to significantly reduce the leakage current between a select source line and a common source line.

REFERENCES:
patent: 6228780 (2001-05-01), Kuo et al.
patent: 6391795 (2002-05-01), Catabay et al.
patent: 2002/0102779 (2002-08-01), Yang
Official Office Action for Chinese Patent Application No. 200510005526.X.
Official action issued in corresponding Taiwanese application No. 93138751 filed Dec. 14, 2004.

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