Passivation capping layer for ohmic contact in II-VI semiconduct

Details Passivation capping layer for ohmic contact in II-VI semiconduct Passivation capping layer for ohmic contact in II-VI semiconduct

1997-02-24

1998-06-16

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

257 94, 257103, 257744, H01L 3300

Patent

active

057675341

ABSTRACT:
A II-VI semiconductor device includes a stack of semiconductor layers. An ohmic contact is provided that electrically couples to the stack. The ohmic contact has an oxidation rate when exposed to an oxidizing substance. A passivation capping layer overlies the ohmic contact and has an oxidation rate that is less than the oxidation rate of the ohmic contact.

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