Passivation and reflector structure for electroluminescent devic

Coherent light generators – Particular active media – Semiconductor

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357 17, 357 52, H01S 319

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active

043170862

ABSTRACT:
A passivation layer of perylene and its incorporation in three layer reflector structure deposited on the light emitting surface of a semiconductor electroluminescent device is disclosed. The reflector structure comprises a layer of low refractive index material, a layer of high refractive index material and a layer of low refractive index material. Preferably the index of refraction for the high refractive index layer is in excess of 3.5 and the materials for this layer may be antimony, bismuth, tellurium, selenium, germanium, arsenic, sulfur, and admixtures thereof. Admixtures may include chemically diordered crystalline or amorphous alloys of selenium, tellurium, arsenic and germanium. Examples of low index materials are Al.sub.2 O.sub.3, MgF.sub.2, SiO.sub.2, ZnO.sub.2 or perylene.

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