Coherent light generators – Particular active media – Semiconductor
Patent
1979-09-13
1982-02-23
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
357 17, 357 52, H01S 319
Patent
active
043170862
ABSTRACT:
A passivation layer of perylene and its incorporation in three layer reflector structure deposited on the light emitting surface of a semiconductor electroluminescent device is disclosed. The reflector structure comprises a layer of low refractive index material, a layer of high refractive index material and a layer of low refractive index material. Preferably the index of refraction for the high refractive index layer is in excess of 3.5 and the materials for this layer may be antimony, bismuth, tellurium, selenium, germanium, arsenic, sulfur, and admixtures thereof. Admixtures may include chemically diordered crystalline or amorphous alloys of selenium, tellurium, arsenic and germanium. Examples of low index materials are Al.sub.2 O.sub.3, MgF.sub.2, SiO.sub.2, ZnO.sub.2 or perylene.
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Furuse et al., "Insulating Carbon Coating on (AlGa)As DH Laser Facets", Appl. Phys. Lett., 33(4), Aug. 15, 1978, pp. 317-318.
Connell Neville
Scifres Donald R.
Streifer William
Carothers, Jr. W. Douglas
Davie James W.
Xerox Corporation
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