Passivation and protection of a semiconductor surface

Details Passivation and protection of a semiconductor surface Passivation and protection of a semiconductor surface

1996-07-18

1998-08-25

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

057990280

ABSTRACT:
A surface of a compound III-V semiconductor device is passivated and protected, respectively, by treatment with a sulfur-containing or selenium-containing passivation film on the surface followed by the deposit of a GaN, GaP, InGaP, GaAsP, ZnS or ZnSe protection layer. Prior to passivation and deposition of the protective layer, previously formed contact metalizations may be protected with a liftoff film or layer. A low temperature MOCVD process is used to deposit the protection layer so that the integrity of the previously deposited contact metalization is maintained. The preferred range for MOCVD deposition of the protection layer is in the range of about 300.degree. C. to about 450.degree. C. This processing temperature range is within a temperature range where stable contact metalization exists.

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