Passivation and insulation of III-V devices with pnictides, part

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects

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257631, 257 2, H01L 2934

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active

052473490

ABSTRACT:
Pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP, and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms thick and grown preferably by molecular beam deposition, although other processes such as vacuum evaporation, sputtering, chemical vapor deposition, and deposition from a liquid melt may be used. The layers are grown on the <100> <110>, and surfaces of the III-V crystals. The pnictide layer reduces the density of surface states, and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased, and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity. The layers may be utilized in MIS and Metal-semiconductor (Schottky) devices for example to insulate and passivate MISFETS, to passivate MESFETS, to reduce the surface current component of the reverse bias dark current in P-I-N and avalanche diodes, and to improve performance of opto-electronic devices such as light emitting diodes, lasers, solar cells, photo cathodes and photo detectors. The pnictide layer may be applied to intermetallic and compound semiconductors having a pnictide component. The pnictides may be phosphorus, arsenic, antimony or bismuth, or combinations thereof.

REFERENCES:
patent: 3383567 (1968-05-01), King et al.
patent: 3571673 (1971-03-01), Ovshinsky et al.
patent: 3700978 (1972-10-01), North et al.
patent: 3877060 (1975-04-01), Shono et al.
patent: 4179308 (1979-12-01), Olsen et al.
patent: 4438351 (1984-03-01), Schuermeyer
patent: 4443489 (1984-04-01), Cowher et al.
patent: 4448633 (1984-05-01), Shuskus
patent: 4493142 (1985-01-01), Hwang
patent: 4508931 (1985-04-01), Michel et al.
patent: 4509066 (1985-04-01), Schachter et al.
patent: 4546372 (1985-10-01), Shuskus
patent: 4558340 (1985-12-01), Schachter et al.
patent: 4567503 (1986-01-01), Olego et al.
Liliental, Z., et al., "Structure of the InP/SiO.sub.2 Interface", Applied Physics Letters, 46(9), May 1985, pp. 889-891.
Hirota, Y., et al., "Chemical Vapor Deposition and Characterization . . . ", Journal of Applied Physics, 53(7), Jul. 1982, pp. 5037-5043.
Yamaguchi, E., et al., "Chemical Deposition of PAs.sub.x N.sub.y Films . . . ", Thin Solid Films, 103(1983), pp. 201-209.
Webster's Ninth New Collegiate Dictionary, Merriam-Webster, Inc., 1984, p. 860.
Sze, S. M., Physics of Semiconductor Devices, 2nd Ed., N.Y., John Wiley & Sons, 1981.
McGraw-Hill Dictionary of Scientific and Technical Terms, S. P. Parker, Ed., N.Y., McGraw-Hill, 1984, p. 1235.
Journal of Applied Physics, vol. 54, No. 8, Aug. 1983, "Reactively . . . Sputtered AlN Films As Gate Dielectric", by Fathimulla et al.

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