Passivating composite for a semiconductor device comprising a si

Details Passivating composite for a semiconductor device comprising a si Passivating composite for a semiconductor device comprising a si

1978-06-19

1981-06-16

Silverberg, Sam

Coating processes

Electrical product produced

Condenser or capacitor

427 94, 427 93, 156653, H01L 744

Patent

active

042738059

ABSTRACT:
The semiconductor device includes a layer of silicon nitride (Si.sub.3 N.sub.4) beneath a phosphosilicate glass (PSG) layer. A silicon nitride impervious layer prevents the oxidation of underlying, exposed silicon regions during a "flow" step and any "reflow" step. Accordingly, the flow of the PSG layer can be conducted in an atmosphere containing steam, which means that the PSG layer can contain less than about 7% phosphorus by weight. The reduction of the phosphorus content of the PSG layer provides increased reliability for the semiconductor device. The method of manufacturing such a device is also disclosed.

REFERENCES:
patent: 3925572 (1975-12-01), Naber
patent: 4063274 (1977-12-01), Dingwall
patent: 4089992 (1978-05-01), Doo
patent: 4091407 (1978-05-01), Williams
patent: 4097889 (1978-06-01), Kern
patent: 4142004 (1979-02-01), Hauser
Tanigaki, J. Electrochemical Soc. (1978), "New Self-Aligned Contact Technology": Solid State Science & Tech., vol. 125, No. 3, pp. 471-472.

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