Passivated thin-film hybrid circuits

Electrical resistors – With base extending along resistance element – Resistance element coated on base

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338195, 219121LH, 219121LJ, 29620, 29847, 427 531, 427103, B05D 306

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active

042887763

ABSTRACT:
Thin-film microcircuit structures passivated with silicon nitride are provided in which included electrical components containing nickel, chromium or other nitride-forming metals are encapsulated in an oxide material, preferably silicon oxide. The metal-containing components are thus prevented from reacting with the silicon nitride passivation coating during through-passivation laser trimming of the components.

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patent: 4217570 (1980-08-01), Holmes
Shibata et al., "IEE Trans. Parts, Hybrids & Packaging", vol. PHP-12, No. 3, pp. 223-230, Sep. 1976.
North, "J. App. Phys.", vol. 48, No. 6, Jun. 1977.
Eleccion, "IEEE Spectrum", Apr. 1972, pp. 391-394.
Gagliano et al., "Proc. IEEE", Feb. 1969, pp. 410-413, 426, 427.

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