Passivated semiconductor pn junction of high electric strength a

Details Passivated semiconductor pn junction of high electric strength a Passivated semiconductor pn junction of high electric strength a

1981-01-14

1984-04-17

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 148 15, 148187, H01L 3118

Patent

active

044425929

ABSTRACT:
A passivated semiconductor pn junction is provided which has a high electric strength, one area being heavily doped and being very thin, in particular for radiation detectors. The pn junction has an edge zone at which a depletion zone (surface channel) is provided underneath the passivation layer.

REFERENCES:
patent: 3769109 (1973-10-01), MacRae et al.
patent: 3891468 (1975-06-01), Ito et al.

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