Passivated semiconductor device and method of making same

Details Passivated semiconductor device and method of making same Passivated semiconductor device and method of making same

1977-05-23

1979-07-17

Wojciechowicz, Edward J.

357 52, 357 54, H01L 2904

Patent

active

041617444

ABSTRACT:
A semiconductor device is surface-passivated by a multi-layer film which includes a base coat of substantially undoped polycrystalline silicon in intimate contact with the substrate and bridging the semiconductor junction. A top coat of polycrystalline silicon is doped with oxygen and disposed overlying the base coat.
The method of passivating a semiconductor device includes initial formation of a base layer of substantially undoped polycrystalline silicon from a controlled atmosphere of a silane material. This is advantageously followed by a deposition of oxygen-doped polycrystalline silicon in continuation of the atmosphere of silane material with the added introduction of a gaseous oxygen donor.

REFERENCES:
patent: 4062707 (1977-12-01), Mochizuki et al.
patent: 4080619 (1978-03-01), Suzuki

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