Passivated polycrystalline semiconductors quantum well/superlatt

Details Passivated polycrystalline semiconductors quantum well/superlatt Passivated polycrystalline semiconductors quantum well/superlatt

1989-10-24

1991-09-24

Hille, Rolf

357 16, 357 61, 357 63, 357 59, 357 2, H01L 2712, H01L 4500, H01L 4902

Patent

active

050517864

ABSTRACT:
The internal grain boundaries and intergranular spaces of polycrystalline semiconductor material may be passivated with an amorphous material, to substantially eliminate the dangling bonds at the internal grain boundaries. The passivated polycrystalline material of the present invention exhibits a lower electrically active defect density at the grain boundaries and intergranular space compared to unpassivated polycrystalline material. Moreover, large classes of amorphous passivating materials may be used for each known semiconductor material so that the passivating process may be readily adapted to existing process parameters and other device constraints. Passivated polycrystalline material may be employed to form the well or low energy bandgap layer of a quantum well device or superlattice, while still maintaining the required tunneling effect. By freeing quantum well devices from the requirement to use monocrystalline well material deeper wells may be produced, and a wider range of materials may be used, with high yields and low cost processes.

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