Passivated optical detectors with full protection layer

Details Passivated optical detectors with full protection layer Passivated optical detectors with full protection layer

2009-04-08

2011-12-06

Lebentritt, Michael (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S437000, C257S462000, C257SE31082, C257SE31097, C257SE31102, C438S069000, C438S072000

Reexamination Certificate

active

08072041

ABSTRACT:
In one example, an optoelectronic transducer includes a first contact, a second contact, a passivation layer, and a protection layer. The passivation layer is formed on top of the first contact and the second contact and is configured to substantially minimize dark current in the optoelectronic transducer. The protection layer is formed on top of the passivation layer and substantially covers the passivation layer. The protection layer is configured to protect the passivation layer from external factors and prevent degradation of the passivation layer.

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