Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2007-08-07
2007-08-07
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C977S778000, C977S856000, C977S847000, C977S888000, C257SE21214
Reexamination Certificate
active
11124244
ABSTRACT:
A plurality of semiconductor nanoparticles having an elementally passivated surface are provided. These nanoparticles are capable of being suspended in water without substantial agglomeration and substantial precipitation on container surfaces for at least 30 days. The method of making the semiconductor nanoparticles includes reacting at least a first reactant and a second reactant in a solution to form the semiconductor nanoparticles in the solution. A first reactant provides a passivating element which binds to dangling bonds on a surface of the nanoparticles to passivate the surface of the nanoparticles. The nanoparticle size can be tuned by etching the nanoparticles located in the solution to a desired size.
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Estrada Michelle
Foley & Lardner LLP
Rensselaer Polytechnic Institute
Stark Jarret J.
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