Passivated faceted article comprising a semiconductor laser

Details Passivated faceted article comprising a semiconductor laser Passivated faceted article comprising a semiconductor laser

1995-11-17

1997-09-09

Bowers, Jr., Charles L.

Coherent light generators

Particular active media

Semiconductor

438 38, H01L 2120

Patent

active

056656378

ABSTRACT:
Provision of a novel passivation layer can result in improved reliability of semiconductor lasers having a laser cavity defined by 2 laser facets. In a preferred embodiment, the passivation layer is a zinc selenide layer (e.g., 5 nm), formed on an essentially contamination-free laser facet. More generally, the passivation layer comprises at least one of Mg, Zn, Cd and Hg, and at least one of S, Se and Te. Typically, the facets are formed by cleaving in vacuum, immediately followed by in-situ deposition of the novel passivation layer material on the facets.

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