Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2007-12-28
2011-12-27
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S621000, C257S777000, C257SE23011
Reexamination Certificate
active
08084854
ABSTRACT:
Pass-through 3D interconnects and microelectronic dies and systems of stacked dies that include such interconnects are disclosed herein. In one embodiment, a system of stacked dies includes a first microelectronic die having a substrate, a metal substrate pad, and a first integrated circuit electrically coupled to the substrate pad. A pass-through 3D interconnect extends between front and back sides of the substrate, including through the substrate pad. The pass-through interconnect is electrically isolated from the substrate pad and electrically coupled to a second integrated circuit of a second microelectronic die attached to the back side of the substrate. In another embodiment, the first integrated circuit is a first memory device and the second integrated circuit is a second memory device, and the system uses the pass-through interconnect as part of an independent communication path to the second memory device.
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Kirby Kyle K.
Pratt David S.
Ray Dewali
Cruz Leslie Pilar
Micro)n Technology, Inc.
Perkins Coie LLP
Tran Minh-Loan T
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