Parylene deposition apparatus including an atmospheric shroud an

Details Parylene deposition apparatus including an atmospheric shroud an Parylene deposition apparatus including an atmospheric shroud an

1995-10-27

1996-07-16

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Multizone chamber

118715, 118724, 118725, 118726, 118728, 4272556, C23C 1600

Patent

active

055363199

ABSTRACT:
Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The apparatus includes an atmospheric shroud which envelopes the entire apparatus, and further includes an inert gas source for providing an inert atmosphere within the shroud. The purpose of the shroud and inert atmosphere is to exclude oxygen from the deposition chamber during vacuum evacuation and the subsequent coating cycle, thus allowing the coating process to be carried out in a substantially oxygen free environment.

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