Parylene deposition apparatus including a tapered deposition cha

Coating apparatus – Gas or vapor deposition – Multizone chamber

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

118715, 118724, 118725, 118726, 118728, 4272556, C23C 1600

Patent

active

055340687

ABSTRACT:
A parylene deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The apparatus includes a frusto-conical shaped deposition chamber which minimizes deposition chamber volume and maximizes flow of vapor over the surface of the wafer, and a vacuum by-pass assembly wherein a high-conductance vacuum outlet is utilized to quickly reduce pressure in the vacuum chamber system and a low-conductance vacuum manifold outlet is utilized to maintain vacuum flow during the deposition procedure.

REFERENCES:
patent: 3246627 (1966-04-01), Loeb
patent: 4468283 (1984-08-01), Ahmed
patent: 4495889 (1985-01-01), Riley
patent: 4596208 (1986-06-01), Wolfson et al.
patent: 4683143 (1987-07-01), Riley
patent: 4945856 (1990-08-01), Stewart
patent: 4957781 (1990-09-01), Kanegae et al.
patent: 5002011 (1991-03-01), Ohmine et al.
patent: 5088444 (1992-02-01), Ohmine et al.
patent: 5091207 (1992-02-01), Tanaka
patent: 5151133 (1992-09-01), Ohmine et al.
patent: 5350453 (1994-09-01), Schlosser

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Parylene deposition apparatus including a tapered deposition cha does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Parylene deposition apparatus including a tapered deposition cha, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Parylene deposition apparatus including a tapered deposition cha will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1864407

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.