Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1995-10-27
1996-07-16
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118715, 118722, 118725, 118726, 118728, 4272556, C23C 1600
Patent
active
055363210
ABSTRACT:
Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The apparatus includes a post-pyrolysis chamber maintained at a predetermined temperature for capturing unpyrolyzed dimer before entry into the deposition chamber, and a filter structure positioned at the deposition chamber inlet to filter out microscopic particles and impurities prior to deposition onto the wafer surface. The post-pyrolysis chamber includes baffles for capturing the unpyrolyzed dimer, and the filter material preferably comprises PTFE. The filter element is heated to prevent deposition onto the filter.
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Beach William F.
Olsen Roger A.
Wary John
Bueker Richard
Specialty Coating Systems Inc.
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