Partitioning method for E-beam lithography

Details Partitioning method for E-beam lithography Partitioning method for E-beam lithography

1992-01-08

1994-05-17

Dzierzynski, Paul M.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37302

Patent

active

053130685

ABSTRACT:
A method of partitioning design shapes, in an E-beam lithography system, into subshapes such that a constant dose may be applied to an E-beam sensitive resist within each subshape. Within each subshape the constant dose corresponds to an approximation to an indicator function, indicative of the degree of the proximity effect, such as the effective exposure of the resist from backscattered electrons or the required dose. The error of the approximation is equal to a predetermined value for each subshape, and can depend upon the position of the subshape within the shape and the influence of errors in the applied dose at that position on the position, on development, of the edge of the shape.

REFERENCES:
patent: 4291231 (1981-09-01), Kawashima et al.
patent: 4477729 (1984-10-01), Chang et al.
patent: 4494004 (1985-01-01), Mauer, IV et al.
patent: 4520269 (1985-05-01), Jones
patent: 4812962 (1989-03-01), Witt
patent: 4943729 (1990-07-01), Ando et al.
patent: 5086398 (1992-02-01), Morizuini

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