Particulate semiconductor devices and methods

Details Particulate semiconductor devices and methods Particulate semiconductor devices and methods

1987-01-06

1990-08-07

James, Andrew J.

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

357 15, 357 30, 136250, H01L 2906, H01L 2714, H01L 3100

Patent

active

049472194

ABSTRACT:
Particulate semiconductor devices and method of preparation by a low temperature process. A particulate layer is screen printed on a metallized substrate and a rear contact is formed by alloying the semiconductor particules to the substrate. The layer is fired and a front Schottky contact applied. The resulting device has sharp diode IV-characteristics, low leakage current, and significant reverse break-down voltages. In the manufacture of efficient and red-enhanced particulate silicon pn-junction solar cells, prediffused particles are used, offering major advantages compared to other techniques, such as where the junction is formed after completion of a particulate layer.

REFERENCES:
patent: 2904613 (1959-09-01), Paradise
patent: 4021323 (1977-05-01), Kilby et al.
patent: 4514580 (1985-04-01), Bartlett
patent: 4654468 (1987-03-01), Nath et al.
Van Viack, Elements of Material Science, Addison-Wesley, 1964, pp. 384-386.

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