Particulate prevention in ion implantation

Details Particulate prevention in ion implantation Particulate prevention in ion implantation

2006-06-02

2009-06-16

Berman, Jack I (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S3960ML, C250S398000, C250S492200, C250S42300F, C250S397000, C250S400000, C250S492300, C250S251000, C250S492220, C250S3960ML, C427S523000, C204S298040, C200S252000

Reexamination Certificate

active

07547898

ABSTRACT:
A system and method for mitigating contamination in an ion implantation system is provided. The system comprises an ion source, a power supply operable to supply power to a filament and mirror electrode of the ion source, a workpiece handling system, and a controller, wherein the ion source is selectively tunable via the controller to provide rapid control of a formation of an ion beam. The controller is operable to selectively rapidly control power to the ion source, therein modulating a power of the ion beam between an implantation power and a minimal power in less than approximately 20 microseconds based, at least in part, to a signal associated with a workpiece position. Control of the ion source therefore mitigates particle contamination in the ion implantation system by minimizing an amount of time at which the ion beam is at the implantation current.

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patent: 2006/0284117 (2006-12-01), Vanderpot et al.
patent: 1030344 (2000-08-01), None
patent: 2345574 (2000-07-01), None
U.S. Appl. No. 11/445,677, filed Jun. 2, 2006, Vanderpot et al.
U.S. Appl. No. 11/445,722, filed Jun. 2, 2006, Vanderpot et al.
International Search Report for International Patent Application PCT/US06/021647; Mailing Date of Mar. 9, 2007, p. 1-6.

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