Particle or radiation beam mask and process for making same

Electric lamp and discharge devices – Cathode ray tube – Shadow mask – support or shield

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Details

2505051, 445 29, 445 47, H01J 2907, G01J 100

Patent

active

048915475

ABSTRACT:
The mask of our invention can be used in image forming units, for example in ion projection microlithography. The mask comprises a mask foil clamped into a retaining frame. The mask foil has a larger thermal expansion coefficient than the retaining frame. To make this mask the mask foil and retaining frame are heatead to a higher temperature than room temperature and clamped in position at this temperature.

REFERENCES:
patent: 2625734 (1953-01-01), Law
patent: 3271488 (1966-09-01), Dahlberg
patent: 3936691 (1976-02-01), Bakker et al.
patent: 4370556 (1983-01-01), Stengl et al.
patent: 4536226 (1985-08-01), Ohtake et al.
Stengl et al., "Electron-beam, X-ray, and Ion Beam Techniques For Submicrometer Lithographics", The Int. Soc. for Optical Eng., IV V.1537, pp. 138-145, May 14-15, 1985.
Burggraaf, Editor, "Research in Ion Projection Lighography", Semiconductor International, In-Depth News, Jul. 1985.
Stengl et al., "Ion Projection System for IC Production," J. Vac. Sci. Technol., 16(6), Nov./Dec. 1979, pp. 1883-1885.
Stengl, "Ion Projection Microlithography For Submicron Device Fabrication", J. Vacuum Science Tech., vol. 19, No. 1 May/Jun. 1981, pp. 1164-1165.
Stengl et al., "Ion Projection Microlithography", Microcircuit Engineering 81, Int. Conf. on Microlithography, Switzerland, Sep. 28-30, 1981.
Stengl et al., "Ion Projection Microlithography", Solid State Technology, Aug. 1982, vol. 25, No. 8, pp. 104-109.
Vacuum Science & Technology, vol. 19, No. 4, Nov., Dec. 1981, Edit: G. Lucovsky; pub. for the American Vacuum Society by the American Institute of Physics, 81, pp. 1164-1165.

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