Particle multibeam lithography

Details Particle multibeam lithography Particle multibeam lithography

2006-01-24

2006-01-24

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492200, C250S492230

Reexamination Certificate

active

06989546

ABSTRACT:
In a particle multibeam lithography apparatus an illumination system (242) having a particle source (203) produces an illuminating beam (205) of electrically charged particles, and a multibeam optical system (208) positioned after the illumination system (242) and comprising at least one aperture plate having an array of a plurality of apertures to form a plurality of sub-beams focuses the sub-beams onto the surface of a substrate (220), wherein for each sub-beam (207) a deflection unit (210) is positioned within the multibeam optical system and adapted to correct individual imaging aberrations of the respective sub-beam with respect to the desired target position and/or position the sub-beam during a writing process an the substrate surface. Preferably, for each sub-beam the respective aperture of the first aperture plate defines the size and shape of the sub-beam cross-section and the multibeam optical system produces a demagnified image of the aperture on the substrate surface, with a demagnification of at least 20:1.

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